半導體製程代工
Semiconductor process step outsourcing

鍍膜成長 Deposition (包含金屬膜、氧化物、氮化物、石墨、類鑽碳DLC等Include, metal film, ocide film, nitride film, graphite, diamond like carbon, DLC, etc.)
半導體製程代工
Semiconductor process step outsourcing

蝕刻Etching(包含矽材料、砷化鎵、碳化矽、三族氮化物等Include, Silicon, GaAs, SiC, GaN, III-Nitride, etc.)
半導體製程代工
Semiconductor process step outsourcing

磊晶外延成長Epitaxy(包含三族氮化物、氧化物、二維材料等Include, III-Nitride, oxide semiconductor, 2D TMD, etc.)
碳化矽單晶襯底(基板)
Silicon carbide single crystal substrate

2吋 / 4吋 /6吋 / 8吋，4H / 6H, 半絕緣 (Semi-Insulating)/n-type
碳化矽外延磊晶片
Epitaxy wafer of Silicon carbide for MOSFET

4吋 / 6吋 / 8吋
氮化鎵外延磊晶片
Epitaxy wafer of GaN on Si/ sapphire/SiC wafer

4吋/6吋/8吋
氮化鋁外延磊晶片
Epitaxy wafer of AlN on Si / sapphire / SiC wafer
 
4吋 / 6吋 / 8吋
GaN HEMT epitaxy wafer for RF application (on Si / sapphire / SiC ) 

4吋 / 6吋 / 8吋
GaN HEMT epitaxy wafer for power application (on Si / sapphire / SiC) 

( BV>650V ) 4吋 / 6吋 / 8吋
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